Shanghai (ZXZC)- GAC Component Co., Ltd., whose majority shareholder is GAC Group, and Zhuzhou CRRC Times Semiconductor Co., Ltd. have set up a semiconductor joint venture dubbed Guangzhou Qinglan Semiconductor Co., Ltd. (called “Qinglan Semiconductor” for short), representing the first IGBT investment project in South China, GAC Group said on Jan. 20 via its WeChat account.

IGBT power module; photo credit: GAC Group

According to the corporate database Tianyancha, Qinglan Semiconductor was incorporated on Dec. 20, 2021 in Guangzhou. Involving a registered capital of 300 million yuan ($47.293 million), the joint venture is 51/49 held by GAC Component and Zhuzhou CRRC Times Semiconductor.

Qinglan Semiconductor will focus on the R&D and industrial application of proprietary technologies related to NEV-used IGBT, said GAC Group. Under the joint venture, an IGBT module manufacturing base will be built at GAC Group Industrial Park for Intelligent & Connected New Energy Vehicles in two phases. Both the first and second phases feature designed capacity of 300,000 automotive IGBT modules per year, expected for operation in 2023 and 2025 respectively. Total investment will be around 463 million yuan ($72.988 million).

GAC Group is vigorously pushing ahead with the R&D and industrialization of NEV-related core components through in-house development and external cooperation. In chip sector, GAC Group has forged partnerships with such chip makers and ICV tech firms as CanSemi, Horizon Robotics , and SpatialIntelligence.

Under the umbrella of CRRC, a Chinese state-run rolling stock manufacturer, Zhuzhou CRRC Times Semiconductor's IGBT-related electrical products have been mainly used in medium- and high-voltage scenarios of 650V to 6,500V. The medium-voltage products are primarily applied in NEV area.