Li Auto's upcoming 800 V high-voltage all-electric platform will utilize STMicro's third-generation 1200 V SiC MOSFET technology.

STMicro's SiC has a higher switching frequency, breakdown voltage and thermal resistance, which improves the performance and energy efficiency of power transistors, which is particularly important in BEV models, the chipmaker said.

Li Auto's upcoming 800 V high-voltage all-electric platform will utilize STMicro's third-generation 1200 V SiC MOSFET technology in the electric drive inverter, the release said.

The SiC supply agreement with STMicro confirms Li Auto's commitment to developing BEVs, said Meng Qingpeng, vice president of supply chain for the company.

Notably, Li Auto formed a joint venture with Chinese semiconductor manufacturer Sanan Semiconductor in March 2022 for SiC chip development and production.

On August 24, 2022, Li Auto said it officially started construction of its power semiconductor R&D and production base in Suzhou, Jiangsu province, which will focus primarily on the R&D and production of third-generation semiconductor SiC power modules.

Li Auto's previous statements and its supply agreement with STMicro make it appear that the main task of the production facility will be to assemble purchased SiC chips into modules for vehicles.

On November 21, local media outlet LatePost reported that Li Auto was setting up a team in Singapore to work on SiC power chips.

Li Auto's SiC chip R&D and production base begins construction